Invention Grant
- Patent Title: Metal routing with flexible space formed using self-aligned spacer patterning
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Application No.: US15800753Application Date: 2017-11-01
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Publication No.: US10529617B2Publication Date: 2020-01-07
- Inventor: Hsiang-Wei Liu , Chia-Tien Wu , Wei-Chen Chu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/3115 ; H01L21/311 ; H01L21/033
Abstract:
A method includes forming a hard mask over a target layer, performing a treatment on a first portion of the hard mask to form a treated portion, with a second portion of the hard mask left untreated as an untreated portion. The method further includes subjecting both the treated portion and the untreated portion of the hard mask to etching, in which the untreated portion is removed as a result of the etching, and the treated portion remains after the etching. A layer underlying the hard mask is etched, and the treated portion of the hard mask is used as a part of an etching mask in the etching.
Public/Granted literature
- US20190103305A1 Metal Routing with Flexible Space Formed Using Self-Aligned Spacer Patterning Public/Granted day:2019-04-04
Information query
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