Invention Grant
- Patent Title: Method of manufacturing light emitting element
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Application No.: US16146841Application Date: 2018-09-28
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Publication No.: US10529623B2Publication Date: 2020-01-07
- Inventor: Shuichi Iwamoto , Shohei Sadamoto , Shinya Mitsuhashi
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Tokushima
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Tokushima
- Agency: Birch, Stewart, Kolasch & Birch LLP
- Priority: JP2017-192030 20170929
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L33/48 ; H01L21/683

Abstract:
The method of manufacturing a light emitting element includes: temporarily fixing a semiconductor layer of a wafer including a base member and the semiconductor layer to a support base member by a double-sided tape having a loss tangent adapted to be increased by heating from an ordinary temperature; forming a cleavage starting portion for dividing the wafer into a plurality of light emitting elements at an ordinary temperature in the wafer; and singulating the wafer into a plurality of light emitting elements on the support base member while the double-sided tape is heated.
Public/Granted literature
- US20190103315A1 METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT Public/Granted day:2019-04-04
Information query
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