Invention Grant
- Patent Title: Power semiconductor device
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Application No.: US16141026Application Date: 2018-09-25
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Publication No.: US10529642B2Publication Date: 2020-01-07
- Inventor: Katsumi Taniguchi , Motohito Hori
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Priority: JP2017-221002 20171116
- Main IPC: H01L23/367
- IPC: H01L23/367 ; H01L23/42 ; H01L23/498

Abstract:
The semiconductor device includes a first conductive layer, semiconductor elements bonded to the upper surface of the first conductive layer, a second conductive layer separated from the first conductive layer, a control terminal bonded to the second conductive layer, a control resistor bonded to the upper surface of the second conductive layer, a control-resistor pin bonded to the upper surface of the control resistor and a wiring board having a control-wiring layer for electrically connecting the semiconductor elements and the control-resistor pin.
Public/Granted literature
- US20190148258A1 POWER SEMICONDUCTOR DEVICE Public/Granted day:2019-05-16
Information query
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