Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14268219Application Date: 2014-05-02
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Publication No.: US10529656B2Publication Date: 2020-01-07
- Inventor: Yoshihiro Yamaguchi , Yoshiko Obiraki
- Applicant: MITSUBISHI ELECTRIC CORPORATION
- Applicant Address: JP Chiyoda-ku
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Chiyoda-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-218256 20100929
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/00 ; H01L25/07 ; H01L23/34 ; H01L23/367

Abstract:
An object is to provide a semiconductor device having a plate electrode adapted to a plurality of chips, capable of being produced at low cost, and having high heat cycle property. A semiconductor device according to the present invention includes a plurality of semiconductor chips formed on a substrate, and a plate electrode connecting electrodes of the plurality of semiconductor chips. The plate electrode has half-cut portions formed by half-pressing and the raised sides of the half-cut portions are bonded with the electrodes of the semiconductor chips.
Public/Granted literature
- US20140239468A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-08-28
Information query
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