Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16118170Application Date: 2018-08-30
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Publication No.: US10529682B2Publication Date: 2020-01-07
- Inventor: Yuki Hata , Shintaro Araki , Takaaki Shirasawa
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L21/00 ; H01L23/00 ; H01L23/367 ; H01L23/373 ; H01L23/42 ; H01L23/433 ; H01L23/495 ; H01L23/40 ; H01L23/31
Abstract:
A semiconductor device includes a semiconductor module having a semiconductor element, a radiator plate which is connected to the semiconductor element and which has at least one radiator plate through hole formed therein, and resin covering the semiconductor element and the radiator plate with a lower surface of the radiator plate exposed, a cooler, first insulating grease provided between the lower surface of the radiator plate and the cooler to thermally connect the radiator plate and the cooler, and second insulating grease provided in the at least one radiator plate through hole to be connected to the first insulating grease.
Public/Granted literature
- US20180374814A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-12-27
Information query
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