Invention Grant
- Patent Title: Conductivity modulated drain extended MOSFET
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Application No.: US15871356Application Date: 2018-01-15
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Publication No.: US10529708B2Publication Date: 2020-01-07
- Inventor: Aravind C Appaswamy , James P. Di Sarro , Farzan Farbiz
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Rose Alyssa Keagy; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L27/07 ; H01L29/49
Abstract:
An integrated circuit is fabricated on a semiconductor substrate. An insulated gate bipolar transistor (IGBT) is formed upon the semiconductor substrate in which the IGBT has an anode terminal, a cathode terminal, and a gate terminal, and a drift region. A diode is also formed on the semiconductor substrate and has an anode terminal and a cathode terminal, in which the anode of the diode is coupled to the anode terminal of the IGBT and the cathode of the diode is coupled to the drift region of the IGBT.
Public/Granted literature
- US20180182755A1 Conductivity Modulated Drain Extended MOSFET Public/Granted day:2018-06-28
Information query
IPC分类:
