Invention Grant
- Patent Title: Tungsten for wordline applications
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Application No.: US15925579Application Date: 2018-03-19
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Publication No.: US10529722B2Publication Date: 2020-01-07
- Inventor: Michal Danek , Hanna Bamnolker , Raashina Humayun , Juwen Gao
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Weaver Austin Villeneuve & Sampson LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/108 ; H01L21/768 ; H01L21/28 ; H01L27/11582 ; H01L21/285 ; C23C16/02 ; C23C16/08 ; C23C16/30 ; H01L27/11556 ; H01L23/532
Abstract:
Disclosed herein are methods and related apparatus for formation of multi-component tungsten-containing films including multi-component tungsten-containing films diffusion barriers. According to various embodiments, the methods involve deposition of multi-component tungsten-containing films using tungsten chloride (WClx) precursors and boron (B)-containing, silicon (Si)-containing or germanium (Ge)-containing reducing agents.
Public/Granted literature
- US20180219014A1 TUNGSTEN FOR WORDLINE APPLICATIONS Public/Granted day:2018-08-02
Information query
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