Invention Grant
- Patent Title: Image sensor having a photoelectric conversion layer coupled to a storage node through a pinning layer with P-type impurities
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Application No.: US15704690Application Date: 2017-09-14
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Publication No.: US10529755B2Publication Date: 2020-01-07
- Inventor: Tae Yon Lee , Gwi Deok Lee , Masaru Ishii , Young Gu Jin
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2017-0001228 20170104
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L27/148 ; H04N5/3745 ; H04N5/361 ; H04N5/378 ; H04N5/369

Abstract:
An image sensor includes a first photoelectric conversion layer that is configured to convert light to a first signal. The image sensor also includes a transfer transistor. The transfer transistor includes a storage node region which stores the first signal. The transfer transistor also includes a transfer gate which transfers the stored first signal, and a floating diffusion region that receives the first signal. The image sensor includes a reset transistor that resets the floating diffusion region, and a drive transistor which receives a pixel voltage. The drive transistor generates an output voltage. The image sensor also includes a selection transistor which outputs the output voltage. A reset drain voltage is applied to a drain electrode of the reset transistor, and is independent of the pixel voltage. The reset drain voltage ranges from about 0.1V to about 1.0V.
Public/Granted literature
- US20180190699A1 IMAGE SENSOR Public/Granted day:2018-07-05
Information query
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