Invention Grant
- Patent Title: Solid-state imaging device having through electrode provided therein and electronic apparatus including the solid-state imaging device
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Application No.: US15619077Application Date: 2017-06-09
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Publication No.: US10529765B2Publication Date: 2020-01-07
- Inventor: Hideaki Togashi
- Applicant: SONY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sheridan Ross P.C.
- Priority: JP2013-169553 20130819
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L27/146 ; H01L23/48 ; H01L21/768 ; H04N5/3745 ; H04N5/369 ; H04N5/378
Abstract:
There is provided a solid-state imaging device including: one or more photoelectric conversion elements provided on side of a first surface of a semiconductor substrate; a through electrode coupled to the one or more photoelectric conversion elements, and provided between the first surface and a second surface of the semiconductor substrate; and an amplifier transistor and a floating diffusion provided on the second surface of the semiconductor substrate, in which the one or more photoelectric conversion elements are coupled to a gate of the amplifier transistor and the floating diffusion via the through electrode.
Public/Granted literature
- US20180006073A1 SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS Public/Granted day:2018-01-04
Information query
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