Invention Grant
- Patent Title: Switch device and storage unit
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Application No.: US15559601Application Date: 2016-03-16
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Publication No.: US10529777B2Publication Date: 2020-01-07
- Inventor: Hiroaki Sei , Kazuhiro Ohba
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: Sony Semiconductor Solutions Corporation
- Current Assignee: Sony Semiconductor Solutions Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sheridan Ross P.C.
- Priority: JP2015-073054 20150331
- International Application: PCT/JP2016/058390 WO 20160316
- International Announcement: WO2016/158430 WO 20161006
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24 ; G11C13/00

Abstract:
A switch device according to an embodiment of the technology includes a first electrode, a second electrode that faces the first electrode, and a switch layer provided between the first electrode and the second electrode. The switch layer includes a chalcogen element. The switch device further includes a diffusion suppressing layer that is in contact with at least a portion of a surface of the switch layer, and suppresses diffusion of oxygen into the switch layer.
Public/Granted literature
- US20180204881A1 SWITCH DEVICE AND STORAGE UNIT Public/Granted day:2018-07-19
Information query
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