A semiconductor device includes a semiconductor substrate, and a semiconductor layer disposed on the semiconductor substrate. First and second pillar layers, of respective first and second conductivity types, are alternately provided in a direction in parallel with a main surface in an active region of the semiconductor layer and in a termination region. A pillar pitch in the termination region is set to be larger than a pillar pitch in the active region. A product of a width of one of the first pillar layers and effective impurity concentration of the first conductivity of the one of the first pillar layers is equal to a product of a width of one of the second pillar layers and effective impurity concentration of the second conductivity of the one of the second pillar layers.