Machining accuracy of an IGBT region is worsened due to a height difference caused by polysilicon. Therefore, there is a problem that characteristic variation of the IGBT increases. Provided is a semiconductor device including a semiconductor substrate; a gate wiring layer provided on a front surface side of the semiconductor substrate; and a gate structure that includes a gate electrode and is provided on the front surface of the semiconductor substrate. The gate wiring layer includes an outer periphery portion that is a metal wiring layer and is provided along an outer periphery of the semiconductor substrate; and an extending portion that is a metal wiring layer, is provided extending from the outer periphery portion toward a central portion of the semiconductor substrate, and is electrically connected to the gate electrode.