- Patent Title: Semiconductor base substance having a boron containing buffer layer, semiconductor device including the same, and methods for manufacturing the semiconductor base substance and the semiconductor device
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Application No.: US15760579Application Date: 2016-08-29
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Publication No.: US10529842B2Publication Date: 2020-01-07
- Inventor: Hiroshi Shikauchi , Ken Sato , Masaru Shinomiya , Keitaro Tsuchiya , Kazunori Hagimoto
- Applicant: SANKEN ELECTRIC CO., LTD. , SHIN-ETSU HANDOTAI CO., LTD.
- Applicant Address: JP Niiza-shi JP Tokyo
- Assignee: SANKEN ELECTRIC CO., LTD.,SHIN-ETSU HANDOTAI CO., LTD.
- Current Assignee: SANKEN ELECTRIC CO., LTD.,SHIN-ETSU HANDOTAI CO., LTD.
- Current Assignee Address: JP Niiza-shi JP Tokyo
- Agency: Oliff PLC
- Priority: JP2015-194840 20150930
- International Application: PCT/JP2016/003915 WO 20160829
- International Announcement: WO2017/056389 WO 20170406
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L21/02 ; H01L29/36 ; H01L29/66 ; H01L29/20
Abstract:
A semiconductor base substance includes: a substrate; a buffer layer which is made of a nitride semiconductor and provided on the substrate; and a channel layer which is made of a nitride semiconductor and provided on the buffer layer, wherein the buffer layer includes: a first region which is provided on the substrate side and has boron concentration higher than acceptor element concentration; and a second region which is provided on the first region, and has boron concentration lower than that in the first region and acceptor element concentration higher than that in the first region. As a result, the semiconductor base substance which can obtain a high pit suppression effect while maintaining a high longitudinal breakdown voltage is provided.
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