Invention Grant
- Patent Title: Multi-channel transistor including an asymmetrical source/drain contact
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Application No.: US15988623Application Date: 2018-05-24
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Publication No.: US10529859B2Publication Date: 2020-01-07
- Inventor: Byung Chan Ryu , Jong Ho You , Hyung Jong Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2017-0149656 20171110
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/417 ; H01L23/522 ; H01L27/088 ; H01L29/66 ; H01L21/8234 ; H01L21/768 ; H01L29/165
Abstract:
A semiconductor device includes a lower interlayer insulating film including a first trench and a second trench adjacent each other; a first gate structure within the first trench and extending in a first direction; a second gate structure within the second trench and extending in the first direction; a source/drain adjacent the first gate structure and the second gate structure; an upper interlayer insulating film on the lower interlayer insulating film; and a contact connected to the source/drain, the contact in the upper interlayer insulating film and the lower interlayer insulating film, wherein the contact includes a first side wall and a second side wall, the first side wall of the contact and the second side wall of the contact are asymmetric with each other, and the contact does not vertically overlap the first gate structure and the second gate structure.
Public/Granted literature
- US20190148538A1 SEMICONDUCTOR DEVICES Public/Granted day:2019-05-16
Information query
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