Invention Grant
- Patent Title: Semiconductor device and method of forming semiconductor fin thereof
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Application No.: US15410839Application Date: 2017-01-20
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Publication No.: US10529862B2Publication Date: 2020-01-07
- Inventor: Chia-Ming Liang , Huai-Hsien Chiu , Yi-Shien Mor
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66
Abstract:
A semiconductor device includes a substrate, an epitaxial channel structure and a gate structure. The epitaxial channel structure is located above the substrate. The epitaxial channel structure has a bottom and a top. The bottom is between the substrate and the top, and the bottom has a width less than that of the top.
Public/Granted literature
- US20180151739A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING SEMICONDUCTOR FIN THEREOF Public/Granted day:2018-05-31
Information query
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