Invention Grant
- Patent Title: Light trapping in hot-electron-based infrared photodetectors
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Application No.: US15693115Application Date: 2017-08-31
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Publication No.: US10529870B1Publication Date: 2020-01-07
- Inventor: Sang Eon Han , Seok Jun Han
- Applicant: Sang Eon Han , Seok Jun Han
- Applicant Address: US NM Albuquerque
- Assignee: STC.UNM
- Current Assignee: STC.UNM
- Current Assignee Address: US NM Albuquerque
- Agency: Keith Vogt, Ltd.
- Agent Keith A. Vogt
- Main IPC: H01L31/0216
- IPC: H01L31/0216 ; G01J1/42 ; H01L31/0232 ; H01L31/028 ; H01L31/0236 ; H01L31/108 ; H01L31/18
Abstract:
A photonic infrared detector having at least one metal layer having a broad-band IR absorption and the detector is configured to enable light to make a plurality of passes within a c-Si substrate.
Information query
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