Invention Grant
- Patent Title: Silicon-containing semiconductor structures, methods of making the same and devices including the same
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Application No.: US15559081Application Date: 2016-03-21
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Publication No.: US10529872B2Publication Date: 2020-01-07
- Inventor: Horia M. Faur , Maria Faur
- Applicant: SPECMAT, INC.
- Applicant Address: US OH North Olmsted
- Assignee: SPECMAT, Inc.
- Current Assignee: SPECMAT, Inc.
- Current Assignee Address: US OH North Olmsted
- Agent Joseph J. Crimaldi
- International Application: PCT/US2016/023370 WO 20160321
- International Announcement: WO2016/149696 WO 20160922
- Main IPC: H01L31/0216
- IPC: H01L31/0216 ; H01L31/028 ; H01L31/18 ; H01L31/20 ; H01L21/306 ; H01L21/02

Abstract:
A semiconductor system includes a silicon substrate and a porous silicon region disposed on the silicon substrate. The porous silicon region is configured to passivate the surface of the silicon substrate via a field effect and to reduce reflection loss on the silicon substrate via an appropriate refractive index. The porous silicon region is manufactured by a stain etching process, which retrofits existing tools for junction isolation and Phosphorus Silicon Glass (PSG) etch in solar cell manufacturing. The retrofitted tools for junction isolation and PSG etch achieves multiple purposes in a single step, including etch-back, PSG etch, antireflection coating, and passivation of the front surface of the solar cell.
Public/Granted literature
- US20180076341A1 SILICON-CONTAINING SEMICONDUCTOR STRUCTURES, METHODS OF MAKING THE SAME AND DEVICES INCLUDING THE SAME Public/Granted day:2018-03-15
Information query
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