- Patent Title: Bit line structures for three-dimensional arrays with magnetic tunnel junction devices including an annular free magnetic layer and a planar reference magnetic layer
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Application No.: US16059016Application Date: 2018-08-08
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Publication No.: US10529915B2Publication Date: 2020-01-07
- Inventor: Satoru Araki
- Applicant: SPIN MEMORY, Inc.
- Applicant Address: US CA Fremont
- Assignee: Spin Memory, Inc.
- Current Assignee: Spin Memory, Inc.
- Current Assignee Address: US CA Fremont
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/12 ; H01L43/10 ; H01L27/22 ; G11C11/16 ; H01L43/08 ; G11C5/02 ; G11C7/06
Abstract:
A Magnetic Tunnel Junction (MTJ) can include an annular structure and a planar reference magnetic layer disposed about the annular structure. The annular structure can include an annular non-magnetic layer disposed about an annular conductive layer, an annular free magnetic layer disposed about the annular non-magnetic layer, and an annular tunnel insulator disposed about the annular free magnetic layer. The planar reference magnetic layer can be separated from the free magnetic layer by the annular tunnel barrier layer.
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