Invention Grant
- Patent Title: Semiconductor device and operating method thereof
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Application No.: US16033816Application Date: 2018-07-12
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Publication No.: US10530341B2Publication Date: 2020-01-07
- Inventor: Woongrae Kim , Tae-Yong Lee
- Applicant: Sk hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2017-0160650 20171128
- Main IPC: H03K3/012
- IPC: H03K3/012 ; H03K17/687

Abstract:
A semiconductor device includes a first internal circuit coupled to first and second voltage terminals for receiving first and second voltages; a second internal circuit coupled to the first and second voltage terminals for receiving the first and second voltages; a first power gating circuit coupled between at least one of the first and second voltage terminals and the first internal circuit, the first power gating circuit being suitable for disconnecting at least one of the first and second voltages based on a first mode signal in a first mode; a second power gating circuit coupled between at least one of the first and second voltage terminals and the second internal circuit, the second power gating circuit being suitable for disconnecting at least one of the first and second voltages based on an integrated mode signal in the first mode and a second mode; and a control circuit suitable for generating the first mode signal and the integrated mode signal.
Public/Granted literature
- US20190165767A1 SEMICONDUCTOR DEVICE AND OPERATING METHOD THEREOF Public/Granted day:2019-05-30
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