Relates to a method of producing a semiconductor crystal having generation of a defect suppressed in the semiconductor single crystal. The production method includes the steps of: forming a boron oxide film (31) on the inner wall of a growth container (10) having a bottom section and a body section continuous to the bottom section; bringing the boron oxide film (31) into contact with boron oxide melt containing silicon oxide to form a boron oxide film (32) containing silicon oxide on the inner wall of the growth container (10); forming raw material melt (34) above seed crystal (20) placed in and on the bottom section of the growth container (10); and solidifying the raw material melt (34) from the seed crystal (20) side to grow a semiconductor single crystal.