Invention Grant
- Patent Title: Gas divided flow supplying apparatus for semiconductor manufacturing equipment
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Application No.: US14397137Application Date: 2013-04-01
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Publication No.: US10534376B2Publication Date: 2020-01-14
- Inventor: Kouji Nishino , Ryousuke Dohi , Kaoru Hirata , Katsuyuki Sugita , Nobukazu Ikeda
- Applicant: FUJIKIN INCORPORATED
- Applicant Address: JP Osaka
- Assignee: FUJIKIN INCORPORATED
- Current Assignee: FUJIKIN INCORPORATED
- Current Assignee Address: JP Osaka
- Agency: Merchant & Gould, P.C.
- Priority: JP2012-103857 20120427
- International Application: PCT/JP2013/002257 WO 20130401
- International Announcement: WO2013/161187 WO 20131031
- Main IPC: G05D7/06
- IPC: G05D7/06

Abstract:
A gas divided flow supplying apparatus, including a control valve 3, a pressure type flow control unit 1a connected to a process gas inlet 11, a gas supply main pipe 8 connected to the downstream side of control valve 3, a plurality of branched pipe passages 9a, 9n connected in parallel to the downstream side of main pipe 8, opening and closing valves 10a, 10n interposed in the respective branched pipe passages 9a, 9n, orifices 6a, 6n provided on the downstream sides of valves 10a, 10n, a temperature sensor 4 provided near the process gas passage between the control valve 3 and the orifices 6a, 6n, a pressure sensor 5 provided in the process gas passage between the control valve 3 and the orifices 6a, 6n, divided gas flow outlets 11a, 11n provided on the outlet sides of the orifices 6a, 6n, and an arithmetic and control unit 7.
Public/Granted literature
- US20150192932A1 GAS DIVIDED FLOW SUPPLYING APPARATUS FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT Public/Granted day:2015-07-09
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