Systems and methods for string-based erase verify to create partial good blocks are disclosed. A block in non-volatile flash memory may include multiple strings. In practice, one string may be slower to erase than other strings. In analyzing the strings, the memory device may iteratively analyze the strings to verify as erased. As one example, the iterations are modified by changing which strings are erased in the subsequent iterations (e.g., only the strings that fail the erase verify). As another example, a predetermined number of iterations are performed after a majority of the strings are verified as erased. In this way, the strings verified as erased need not undergo more deep erasing, which may damage the strings. Further, if fewer than all of the strings are verified as erased, the memory device may designate the block as a partially good block.