Invention Grant
- Patent Title: Method for manufacture of a semiconductor wafer suitable for the manufacture of an SOI substrate, and SOI substrate wafer thus obtained
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Application No.: US15892696Application Date: 2018-02-09
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Publication No.: US10535552B2Publication Date: 2020-01-14
- Inventor: Didier Dutartre , Herve Jaouen
- Applicant: STMicroelectronics SA
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics SA
- Current Assignee: STMicroelectronics SA
- Current Assignee Address: FR Montrouge
- Agency: Crowe & Dunlevy
- Priority: FR1452845 20140331
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/02
Abstract:
A semiconductor wafer suitable for fabricating an SOI substrate is provided by: producing a first layer of polycrystalline semiconductor on a top side of a semiconductor carrier; then forming an interface zone on a top side of the first layer, wherein the interface zone has a structure different from a crystal structure of the first layer; and then producing a second layer of polycrystalline semiconductor on the interface zone.
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