Invention Grant
- Patent Title: Cell-like floating-gate test structure
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Application No.: US15962177Application Date: 2018-04-25
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Publication No.: US10535574B2Publication Date: 2020-01-14
- Inventor: Meng-Han Lin , Chih-Ren Hsieh , Ya-Chen Kao , Chen-Chin Liu , Chih-Pin Huang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L27/11529 ; H01L27/11524 ; H01L27/11519

Abstract:
Various embodiments of the present application are directed to an integrated circuit (IC) comprising a floating gate test device with a cell-like top layout, as well as a method for forming the IC. In some embodiments, the IC comprises a semiconductor substrate and the floating gate test device. The floating gate test device is on the semiconductor substrate, and comprises a floating gate electrode and a control gate electrode overlying the floating gate electrode. The floating gate electrode and the control gate electrode partially define an array of islands, and further partially define a plurality of bridges interconnecting the islands. The islands and the bridges define the cell-like top layout and may, for example, prevent process-induced damage to the floating gate test device.
Public/Granted literature
- US20190088561A1 CELL-LIKE FLOATING-GATE TEST STRUCTURE Public/Granted day:2019-03-21
Information query
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