Invention Grant
- Patent Title: Thermal dissipation through seal rings in 3DIC structure
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Application No.: US16410489Application Date: 2019-05-13
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Publication No.: US10535580B2Publication Date: 2020-01-14
- Inventor: Jing-Cheng Lin , Shih-Yi Syu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/02
- IPC: H01L23/02 ; H01L23/367 ; H01L23/00 ; H01L23/48 ; H01L25/065 ; H01L21/48 ; H01L21/768 ; H01L25/075
Abstract:
A die includes a semiconductor substrate, a through-via penetrating through the semiconductor substrate, a seal ring overlying and connected to the through-via, and an electrical connector underlying the semiconductor substrate and electrically coupled to the seal ring through the through-via.
Public/Granted literature
- US20190267305A1 Thermal Dissipation Through Seal Rings in 3DIC Structure Public/Granted day:2019-08-29
Information query
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