Invention Grant
- Patent Title: Die with metallized sidewall and method of manufacturing
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Application No.: US15408979Application Date: 2017-01-18
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Publication No.: US10535588B2Publication Date: 2020-01-14
- Inventor: Rennier Rodriguez , Aiza Marie Agudon , Jefferson Talledo
- Applicant: STMicroelectronics, Inc.
- Applicant Address: PH Calamba
- Assignee: STMicroelectronics, Inc.
- Current Assignee: STMicroelectronics, Inc.
- Current Assignee Address: PH Calamba
- Agency: Seed IP Law Group LLP
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L21/683 ; H01L21/304 ; H01L21/3065 ; H01L23/00 ; H01L23/58 ; H01L21/78 ; H01L29/06 ; H01L33/20 ; H01L21/302 ; H01L21/306

Abstract:
The present disclosure is directed to a die having a metallized sidewall and methods of manufacturing the same. A contiguous metal layer is applied to each edge of a backside of a wafer. The wafer is cut at a base of a plurality of channels formed in the backside to create individual die each having a flange that is part of a sidewall of the die and includes a portion that is covered by the metal layer. When an individual die is coupled to a die pad, a semiconductive glue bonds the metal layer on the sidewall and a backside of the die to the die pad, which decreases the risk of delamination along the sides of the die. The flange also prevents the glue from contacting the active side of the die by acting as a barrier against adhesive creep of the glue up the sidewall of the die.
Public/Granted literature
- US20180204786A1 DIE WITH METALLIZED SIDEWALL AND METHOD OF MANUFACTURING Public/Granted day:2018-07-19
Information query
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