Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US15674104Application Date: 2017-08-10
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Publication No.: US10535591B2Publication Date: 2020-01-14
- Inventor: Jing-Cheng Lin , Li-Hui Cheng , Po-Hao Tsai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L21/48 ; H01L23/31 ; H01L23/00 ; H01L25/065 ; H01L25/16 ; H01L21/56
Abstract:
A semiconductor device includes a substrate, electrical conductors and a passivation layer. Each of the electrical conductors includes a first portion through the substrate, and a second portion over the surface of the substrate and connected to the first portion. The passivation layer is over the surface of the substrate, wherein the passivation layer partially covers an edge of the second portion of each of the electrical conductors.
Public/Granted literature
- US20190051589A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2019-02-14
Information query
IPC分类:
