Invention Grant
- Patent Title: Semiconductor structure, integrated circuit device, and method of forming semiconductor structure
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Application No.: US15893452Application Date: 2018-02-09
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Publication No.: US10535613B2Publication Date: 2020-01-14
- Inventor: Shih-Hsien Ma , Haw-Chuan Wu , Shih-Hao Tsai , Yu-Chuan Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L23/552
- IPC: H01L23/552 ; H01L21/027

Abstract:
A semiconductor structure, integrated circuit device, and method of forming semiconductor structure are provided. In various embodiments, the semiconductor structure includes a substrate containing a high topography region and a low topography region, an outer protection wall on an outer peripheral portion of the high topography region next to the low topography region, and an anti-reflective coating over the outer protection wall, the high topography region, and the low topography region.
Public/Granted literature
- US20180166395A1 SEMICONDUCTOR STRUCTURE, INTEGRATED CIRCUIT DEVICE, AND METHOD OF FORMING SEMICONDUCTOR STRUCTURE Public/Granted day:2018-06-14
Information query
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