Invention Grant
- Patent Title: Method of manufacturing semiconductor structure
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Application No.: US16229585Application Date: 2018-12-21
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Publication No.: US10535629B2Publication Date: 2020-01-14
- Inventor: Alexander Kalnitsky , Yi-Yang Lei , Hsi-Ching Wang , Cheng-Yu Kuo , Tsung Lung Huang , Ching-Hua Hsieh , Chung-Shi Liu , Chen-Hua Yu , Chin-Yu Ku , De-Dui Liao , Kuo-Chio Liu , Kai-Di Wu , Kuo-Pin Chang , Sheng-Pin Yang , Isaac Huang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L21/683
- IPC: H01L21/683 ; H01L23/00 ; H01L21/78
Abstract:
A method of manufacturing a semiconductor structure includes receiving a first substrate including an IMD layer disposed over the first substrate and a plurality of conductive bumps disposed in the IMD layer; receiving a second substrate; disposing a patterned adhesive over the first substrate, wherein at least a portion of the IMD layer is exposed through the patterned adhesive; and bonding the first substrate with the second substrate, wherein a top surface of the at least portion of the IMD layer is exposed through the patterned adhesive after bonding the first substrate with the second substrate.
Public/Granted literature
- US20190115313A1 METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE Public/Granted day:2019-04-18
Information query
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