Invention Grant
- Patent Title: Second semiconductor wafer attached to a first semiconductor wafer with a through hole connected to an inductor
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Application No.: US16009579Application Date: 2018-06-15
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Publication No.: US10535635B2Publication Date: 2020-01-14
- Inventor: Chih-Lin Chen , Chin-Chou Liu , Fong-Yuan Chang , Hui-Yu Lee , Po-Hsiang Huang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L23/12
- IPC: H01L23/12 ; H01L23/34 ; H01L21/00 ; H01L25/065 ; H01L49/02 ; H01L23/48 ; H01L23/522 ; H01L23/00 ; H01L21/768 ; H01L25/00 ; H01L23/538 ; H01L23/528

Abstract:
An integrated circuit includes a first semiconductor wafer, a second semiconductor wafer, a first interconnect structure, an inductor, a second interconnect structure and a through substrate via. The first semiconductor wafer has a first device in a front side of the first semiconductor wafer. The second semiconductor wafer is bonded to the first semiconductor wafer. The first interconnect structure is below a backside of the first semiconductor wafer. The inductor is below the first semiconductor wafer, and at least a portion of the inductor is within the first interconnect structure. The second interconnect structure is on the front side of the first semiconductor wafer. The through substrate via extends through the first semiconductor wafer. The inductor is coupled to at least the first device by the second interconnect structure and the through substrate via.
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