Invention Grant
- Patent Title: High switching frequency, low loss and small form factor fully integrated power stage
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Application No.: US15887589Application Date: 2018-02-02
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Publication No.: US10535650B2Publication Date: 2020-01-14
- Inventor: Xin Zhang , Ko-Tao Lee , Todd E. Takken , Paul W. Coteus , Andrew Ferencz
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Erik Johnson
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L27/06 ; H01L29/20 ; H01L21/768 ; H01L21/8258 ; H01L21/84 ; H01L27/12 ; H01L21/02 ; H01L23/528 ; H03K17/687 ; H01L21/311

Abstract:
A semiconductor device includes a first circuit formed on a substrate in a first region, a second circuit formed on the substrate in a second region and including one or more transistors, and connections between the first circuit and respective gates of the transistors of the second circuit. The substrate includes a first semiconductor material and the second circuit includes one or more transistors having channels formed from a second semiconductor material different from the first semiconductor material.
Public/Granted literature
- US20190244955A1 HIGH SWITCHING FREQUENCY, LOW LOSS AND SMALL FORM FACTOR FULLY INTEGRATED POWER STAGE Public/Granted day:2019-08-08
Information query
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