Invention Grant
- Patent Title: Method of forming a semiconductor device structure and semiconductor device structure
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Application No.: US15653661Application Date: 2017-07-19
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Publication No.: US10535674B2Publication Date: 2020-01-14
- Inventor: Juergen Faul , Frank Jakubowski
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L27/11568
- IPC: H01L27/11568 ; H01L21/762 ; H01L21/308 ; H01L21/311 ; H01L21/3065 ; H01L21/265 ; H01L27/11521 ; H01L27/12 ; H01L29/423 ; H01L21/28 ; H01L27/11582 ; H01L49/02
Abstract:
A semiconductor device structure includes a hybrid substrate having a semiconductor-on-insulator (SOI) region that includes an active semiconductor layer, a substrate material and a buried insulating material interposed between the active semiconductor layer and the substrate material, and a bulk semiconductor region that includes the substrate material. An insulating structure is positioned in the hybrid substrate, wherein the insulating structure separates the bulk region from the SOI region, and a gate electrode is positioned above the substrate material in the bulk region, wherein the insulating structure is in contact with two opposing sidewalls of the gate electrode.
Public/Granted literature
- US20170317097A1 METHOD OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE AND SEMICONDUCTOR DEVICE STRUCTURE Public/Granted day:2017-11-02
Information query
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