Invention Grant
- Patent Title: Image sensor with pad structure
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Application No.: US15907654Application Date: 2018-02-28
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Publication No.: US10535698B2Publication Date: 2020-01-14
- Inventor: Yun-Wei Cheng , Chun-Hao Chou , Kuo-Cheng Lee , Hsun-Ying Huang , Yin-Chieh Huang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
The present disclosure relates to an image sensor with a pad structure formed during a front-end-of-line process. The pad structure can be formed prior to formation of back side deep trench isolation structures and metal grid structures. An opening is formed on a back side of the image sensor device to expose the embedded pad structure and to form electrical connections.
Public/Granted literature
- US20190165029A1 IMAGE SENSOR WITH PAD STRUCTURE Public/Granted day:2019-05-30
Information query
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