Invention Grant
- Patent Title: Image sensors employing sensitized semiconductor diodes
-
Application No.: US15939331Application Date: 2018-03-29
-
Publication No.: US10535699B2Publication Date: 2020-01-14
- Inventor: Hui Tian , Igor Constantin Ivanov , Edward Hartley Sargent
- Applicant: InVisage Technologies, Inc.
- Applicant Address: US CA Newark
- Assignee: INVISAGE TECHNOLOGIES, INC.
- Current Assignee: INVISAGE TECHNOLOGIES, INC.
- Current Assignee Address: US CA Newark
- Agency: Kligler & Associates Patent Attorneys Ltd
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H04N9/04

Abstract:
An image sensor device includes a semiconductor substrate, including an array of pixel circuits, which define respective pixels of the device. A photosensitive layer is formed over the semiconductor substrate and configured to transfer charge to the pixel circuits in response to light incident on the photosensitive layer. An upper layer is formed over the photosensitive layer and is at least partially transparent to the light. Opaque partitions extend vertically through the upper layer in a checkerboard pattern aligned with the pixels in the array.
Public/Granted literature
- US20180219043A1 Image sensors employing sensitized semiconductor diodes Public/Granted day:2018-08-02
Information query
IPC分类: