Invention Grant
- Patent Title: Plasmonic-nanostructure sensor pixel
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Application No.: US14993472Application Date: 2016-01-12
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Publication No.: US10535701B2Publication Date: 2020-01-14
- Inventor: Boyang Zhang , Chin Poh Pang
- Applicant: OmniVision Technologies, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Lathrop Gage LLP
- Main IPC: H01L27/146
- IPC: H01L27/146 ; B82Y20/00

Abstract:
A first plasmonic-nanostructure sensor pixel includes a semiconductor substrate and a plurality of metal pillars. The semiconductor substrate has a top surface and a photodiode region therebeneath. The plurality of metal pillars is at least partially embedded in the substrate and extends from the top surface in a direction substantially perpendicular to the top surface. A second plasmonic-nanostructure sensor pixel includes (a) a semiconductor substrate having a top surface, (b) an oxide layer on the top surface, (c) a thin-film coating between the top surface and the oxide layer, and (d) a plurality of metal nanoparticles (i) at least partially between the top surface and the oxide layer and (ii) at least partially embedded in at least one of the thin-film coating and the oxide layer. A third plasmonic-nanostructure sensor pixel includes features of both the first and second plasmonic-nanostructure sensor pixels.
Public/Granted literature
- US20170200760A1 Plasmonic-Nanostructure Sensor Pixel Public/Granted day:2017-07-13
Information query
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