Invention Grant
- Patent Title: Metallization and its use in, in particular, an IGBT or a diode
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Application No.: US15708299Application Date: 2017-09-19
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Publication No.: US10535743B2Publication Date: 2020-01-14
- Inventor: Frank Hille , Hans-Joachim Schulze
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102004012818 20040316
- Main IPC: H01L29/732
- IPC: H01L29/732 ; H01L29/32 ; H01L21/263 ; H01L21/266 ; H01L29/417 ; H01L29/739
Abstract:
A vertical power semiconductor component includes a semiconductor chip, the semiconductor chip having a top main surface and a bottom main surface. Each of said top main surface and said bottom main surface is in a heat exchanging relationship with a top metallization layer and a bottom metallization each of which serving as a heat sink. Each of said top metallization layer and said bottom metallization layer have a layer thickness of at least 15 μm and have a specific heat capacity per volume that is at least a factor of 1.3 higher than the specific heat capacity per volume of the semiconductor chip. Each of said top metallization layer and said bottom metallization layer serving as a heat sink contacts the respective main surface via a respective diffusion barrier layer.
Public/Granted literature
- US20180047815A1 Metallization and Its Use In, In Particular, an IGBT or a Diode Public/Granted day:2018-02-15
Information query
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