Invention Grant
- Patent Title: Thin film transistor and fabricating method thereof, and array substrate
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Application No.: US15988805Application Date: 2018-05-24
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Publication No.: US10535781B2Publication Date: 2020-01-14
- Inventor: Lin Chen , Haijiao Qian , Chengshao Yang , Mengyu Luan
- Applicant: BOE TECHNOLOGY GROUP CO., LTD. , HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Beijing CN Anhui
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.,HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.,HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Beijing CN Anhui
- Agency: Nath, Goldberg & Meyer
- Agent Joshua B. Goldberg
- Priority: CN201711027663 20171027
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/417 ; H01L29/66

Abstract:
The disclosure provides a thin film transistor and a fabricating method thereof, and an array substrate. The thin film transistor includes a gate, a first active layer, a second active layer, a first source, a first drain, a second source and a second drain which are provided above a base substrate. The first active layer is located at a side of the gate facing the base substrate, and the second active layer is located at a side of the gate facing away from the first active layer. The first source and the first drain are located at a side of the first active layer facing away from the gate and are connected with the first active layer. The second source and the second drain are located at a side of the second active layer facing away from the gate and are connected with the second active layer.
Public/Granted literature
- US20190131461A1 THIN FILM TRANSISTOR AND FABRICATING METHOD THEREOF, AND ARRAY SUBSTRATE Public/Granted day:2019-05-02
Information query
IPC分类: