Invention Grant
- Patent Title: Edge detector circuit and method
-
Application No.: US16415918Application Date: 2019-05-17
-
Publication No.: US10536146B2Publication Date: 2020-01-14
- Inventor: Tsung-Ching (Jim) Huang , Chan-Hong Chern , Ming-Chieh Huang , Chih-Chang Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H03K5/22
- IPC: H03K5/22 ; H03K19/0185

Abstract:
An edge detector includes an output node selectively coupled to a first voltage node through a first transistor, the first voltage node having a first voltage level, and a second transistor configured to continuously couple the output node to a second voltage node having a second voltage level. A capacitor includes a first terminal coupled to a gate of the first transistor and a second terminal configured to receive an input signal.
Public/Granted literature
- US20190273500A1 EDGE DETECTOR CIRCUIT AND METHOD Public/Granted day:2019-09-05
Information query
IPC分类: