Invention Grant
- Patent Title: Crystal laminate structure
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Application No.: US15559167Application Date: 2016-02-17
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Publication No.: US10538862B2Publication Date: 2020-01-21
- Inventor: Ken Goto , Akinori Koukitu , Yoshinao Kumagai , Hisashi Murakami
- Applicant: TAMURA CORPORATION , NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: TAMURA CORPORATION,NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY
- Current Assignee: TAMURA CORPORATION,NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Scully Scott Murphy and Presser
- Priority: JP2015-058518 20150320
- International Application: PCT/JP2016/054620 WO 20160217
- International Announcement: WO2016/152335 WO 20160929
- Main IPC: C30B29/16
- IPC: C30B29/16 ; C30B25/20 ; H01L21/205 ; H01L21/02 ; H01L21/04 ; C30B29/26 ; C30B25/02 ; C30B29/68 ; C30B31/08
Abstract:
A crystal laminate structure includes a Ga2O3-based substrate, and a β-Ga2O3-based single crystal film formed by epitaxial crystal growth on a principal surface of the Ga2O3-based substrate. The β-Ga2O3-based single crystal film includes Cl and a dopant doped in parallel with the crystal growth at a concentration of not less than 1×1013 atoms/cm3 and not more than 5.0×1020 atoms/cm3.
Public/Granted literature
- US20180073164A1 CRYSTAL LAMINATE STRUCTURE Public/Granted day:2018-03-15
Information query
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