Invention Grant
- Patent Title: I-line negative type photoresist composition having excellent etching resistance
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Application No.: US15753746Application Date: 2016-08-26
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Publication No.: US10539871B2Publication Date: 2020-01-21
- Inventor: Seung Hun Lee , Seung Hyun Lee , Sang Woong Yoon , Young Cheol Choi
- Applicant: YOUNG CHANG CHEMICAL CO., LTD
- Applicant Address: KR Gyeongsangbuk-Do
- Assignee: YOUNG CHANG CHEMICAL CO., LTD
- Current Assignee: YOUNG CHANG CHEMICAL CO., LTD
- Current Assignee Address: KR Gyeongsangbuk-Do
- Agency: Novick, Kim & Leem, PLLC
- Agent Jae Youn Kim
- Priority: KR10-2015-0121408 20150828
- International Application: PCT/KR2016/009494 WO 20160826
- International Announcement: WO2017/039235 WO 20170309
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/038 ; G03F7/029 ; G03F7/027 ; G03F7/032 ; G03F7/16 ; G03F7/20 ; G03F7/32 ; G03F7/38
Abstract:
This invention relates to an I-line negative photoresist composition having excellent etching resistance, which can exhibit superior etching resistance compared to conventional I-line negative photoresists and is thus suitable for use in semiconductor processing.
Public/Granted literature
- US20180246404A1 I-LINE NEGATIVE TYPE PHOTORESIST COMPOSITION HAVING EXCELLENT ETCHING RESISTANCE Public/Granted day:2018-08-30
Information query
IPC分类:
