Invention Grant
- Patent Title: Lithography patterning technique
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Application No.: US15588773Application Date: 2017-05-08
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Publication No.: US10539878B2Publication Date: 2020-01-21
- Inventor: Lilin Chang , Ching-Yu Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/32
- IPC: G03F7/32 ; G03F7/20

Abstract:
A lithography developing composition is disclosed. In an exemplary aspect, the composition comprises an alkaline aqueous solution having a first organic base and a second organic base, wherein the first organic base is a quaternary ammonium hydroxide with pendant groups on its side chains and the second organic base is another quaternary ammonium hydroxide with electron withdrawing groups on its side chains. In another exemplary aspect, the composition comprises an alkaline aqueous solution having an organic base that is a quaternary ammonium hydroxide with at least one electron withdrawing group on its side chains and the organic base has basicity weaker than Tetramethylammonium hydroxide (TMAH). In yet another exemplary aspect, the composition comprises an alkaline aqueous solution having an organic base that is Trimethylphenylammonium hydroxide or Benzyldimethyltetradecylammonium hydroxide.
Public/Granted literature
- US20170242341A1 Lithography Patterning Technique Public/Granted day:2017-08-24
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