Invention Grant
- Patent Title: Low-voltage bias generator based on high-voltage supply
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Application No.: US16221987Application Date: 2018-12-17
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Publication No.: US10539973B1Publication Date: 2020-01-21
- Inventor: Michele Piccardi , Xiaojiang Guo
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G05F3/20 ; H02M3/07 ; G05F3/24

Abstract:
Apparatus and methods are disclosed for providing a bias. A main diode has first and second terminals that connect to a high voltage (HV) line and to an HV regulated line, respectively. The main diode provides a voltage on the HV regulated line lower than a voltage of the HV line. A first current mirror provides a first current. The current mirror connects to the first terminal of the main diode and the HV regulated line. A second current mirror provides a second current. The second current mirror connects to the HV line, the first current mirror, and a low-voltage (LV) line. An impedance is between the LV line and the HV regulated line. A voltage differential between the HV regulated line and the LV line below a low-voltage threshold, and a voltage differential between the HV regulated line and the HV line above the low-voltage threshold are provided.
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