Invention Grant
- Patent Title: Performance boosting method and system of semiconductor device
-
Application No.: US15652588Application Date: 2017-07-18
-
Publication No.: US10539995B2Publication Date: 2020-01-21
- Inventor: Jong Lae Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C
- Priority: KR10-2016-0180998 20161228
- Main IPC: G06F11/30
- IPC: G06F11/30 ; G06F1/3234 ; H04L29/08 ; G06F11/34

Abstract:
A performance boosting method of a semiconductor device includes monitoring input of a user and an amount of system usage, generating user system information in response to an event occurring, the user system information including first information and the amount of system usage, the first information regarding input of the user, adaptively determining a performance boosting target value based on the user system information, and boosting an operating frequency according to the performance boosting target value.
Public/Granted literature
- US20180181188A1 PERFORMANCE BOOSTING METHOD AND SYSTEM OF SEMICONDUCTOR DEVICE Public/Granted day:2018-06-28
Information query