Invention Grant
- Patent Title: Data storage device and flash memory control method
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Application No.: US15837782Application Date: 2017-12-11
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Publication No.: US10540289B2Publication Date: 2020-01-21
- Inventor: Wen-Sheng Lin
- Applicant: Silicon Motion, Inc.
- Applicant Address: TW Jhubei
- Assignee: Silicon Motion, Inc.
- Current Assignee: Silicon Motion, Inc.
- Current Assignee Address: TW Jhubei
- Agency: Wang Law Firm, Inc.
- Priority: TW103138009A 20141103
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G06F12/1009 ; G06F3/06 ; G06F12/02 ; G06F11/14
Abstract:
A flash memory control technology with high reliability. In a power recovery process, a microcontroller is configured to duplicate a last write page of a run-time write block of a flash memory and thereby generate a duplicated page in the run-time write block to replace the last write page for reliability enhancement.
Public/Granted literature
- US20180101481A1 Data Storage Device and Flash Memory Control Method Public/Granted day:2018-04-12
Information query
