A semiconductor light-emitting device according to an embodiment of the present disclosure includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer and including a plurality of well layers. In the plurality of well layers included in the active layer, a band gap inclination angle θ1 of a second well layer located relatively close to the p-type semiconductor layer is smaller than a band gap inclination angle θ2 of a first well layer located relatively close to the n-type semiconductor layer.