Invention Grant
- Patent Title: Material layers, semiconductor devices including the same, and methods of fabricating material layers and semiconductor devices
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Application No.: US15336901Application Date: 2016-10-28
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Publication No.: US10541127B2Publication Date: 2020-01-21
- Inventor: Yong-suk Tak , Gi-gwan Park , Jin-bum Kim , Bon-young Koo , Ki-yeon Park , Tae-jong Lee
- Applicant: Yong-suk Tak , Gi-gwan Park , Jin-bum Kim , Bon-young Koo , Ki-yeon Park , Tae-jong Lee
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2015-0155794 20151106
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/455 ; C23C16/50 ; H01L21/28 ; H01L29/06 ; H01L29/08 ; H01L29/16 ; H01L29/161 ; H01L29/423 ; H01L29/49 ; H01L29/51 ; H01L29/66 ; H01L29/78 ; H01L29/786
Abstract:
A material layer, a semiconductor device including the material layer, and methods of forming the material layer and the semiconductor device are provided herein. A method of forming a SiOCN material layer may include supplying a silicon source onto a substrate, supplying a carbon source onto the substrate, supplying an oxygen source onto the substrate, supplying a nitrogen source onto the substrate, and supplying hydrogen onto the substrate. When a material layer is formed according to a method of the present inventive concepts, a material layer having a high tolerance to wet etching and/or good electric characteristics may be formed, and may even be formed when the method is performed at a low temperature.
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