Invention Grant
- Patent Title: Halometallate ligand-capped semiconductor nanocrystals
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Application No.: US15772258Application Date: 2016-11-02
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Publication No.: US10541134B2Publication Date: 2020-01-21
- Inventor: James Kurley , Hao Zhang , Dmitri V. Talapin , Jake Russell , Margaret Hervey Hudson
- Applicant: The University of Chicago
- Applicant Address: US IL Chicago
- Assignee: The University of Chicago
- Current Assignee: The University of Chicago
- Current Assignee Address: US IL Chicago
- Agency: Bell & Manning, LLC
- International Application: PCT/US2016/060026 WO 20161102
- International Announcement: WO2017/079225 WO 20170511
- Main IPC: H01L21/02
- IPC: H01L21/02 ; G01T1/202

Abstract:
Halometallate-capped semiconductor nanocrystals and methods for making the halometallate-capped semiconductor nanocrystals are provided. Also provided are methods of using solutions of the halometallate-capped semiconductor nanocrystals as precursors for semiconductor film formation. When solutions of the halometallate ligand-capped semiconductor nanocrystals are annealed, the halometallate ligands can act as grain growth promoters during the sintering of the semiconductor nanocrystals.
Public/Granted literature
- US20180315600A1 HALOMETALLATE LIGAND-CAPPED SEMICONDUCTOR NANOCRYSTALS Public/Granted day:2018-11-01
Information query
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