Invention Grant
- Patent Title: Method for controlling the amount of radiation having a predetermined wavelength to be absorbed by a structure disposed on a semiconductor
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Application No.: US16220248Application Date: 2018-12-14
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Publication No.: US10541148B2Publication Date: 2020-01-21
- Inventor: Kezia Cheng , Kamal Tabatabaie Alavi , Adrian D. Williams , Christopher J. MacDonald , Kiuchul Hwang
- Applicant: Raytheon Company
- Applicant Address: US MA Waltham
- Assignee: Raytheon Company
- Current Assignee: Raytheon Company
- Current Assignee Address: US MA Waltham
- Agency: Daly, Crowley, Mofford & Durkee, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L21/321 ; H01L29/45 ; H01L21/3205 ; H01L21/285
Abstract:
A stack of layers providing an ohmic contact with the semiconductor, a lower metal layer of the stack is disposed in direct contact with the semiconductor; and a radiation absorption control layer disposed over the lower layer for controlling an amount of the radiant energy to be absorbed in the radiation absorption control layer during exposure of the stack to the radiation during a process used to alloy the stack with the semiconductor to form the ohmic contact.
Public/Granted literature
Information query
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