Invention Grant
- Patent Title: Gettering layer forming method
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Application No.: US15971201Application Date: 2018-05-04
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Publication No.: US10541149B2Publication Date: 2020-01-21
- Inventor: Seiji Harada
- Applicant: DISCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: DISCO CORPORATION
- Current Assignee: DISCO CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Greer Burns & Crain Ltd.
- Priority: JP2017-092456 20170508
- Main IPC: H01L21/322
- IPC: H01L21/322 ; H01L21/02 ; H01L21/67 ; H01L21/687 ; H01L21/304
Abstract:
A gettering layer forming method includes a coating step of applying a solution of metal salt to a back side of a wafer, and a drying step of drying the wafer after performing the coating step, thereby forming a gettering layer containing the metal salt on the back side of the wafer.
Public/Granted literature
- US20180323080A1 GETTERING LAYER FORMING METHOD Public/Granted day:2018-11-08
Information query
IPC分类:
