Invention Grant
- Patent Title: Temperature adjustment method using wet surface in a processing chamber
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Application No.: US15656328Application Date: 2017-07-21
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Publication No.: US10541158B2Publication Date: 2020-01-21
- Inventor: Yasuharu Sasaki , Eiichiro Kikuchi , Kazuyoshi Matsuzaki
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Cantor Colburn LLP
- Priority: JP2010-184996 20100820
- Main IPC: H01L21/67
- IPC: H01L21/67

Abstract:
A temperature adjustment method comprising: forming a wet surface wet with a cooling medium by supplying the cooling medium to a rear surface of a temperature adjustment surface of a component member in a processing chamber of a substrate processing device comprising the processing chamber which performs predetermined processing on a substrate and is vacuum-exhaustible; and adjusting a temperature of the temperature adjustment surface due to latent heat of evaporation of the cooling medium by evaporating the cooling medium which forms the wet surface by adjusting a pressure in an evaporation chamber which isolates the wet surface from an atmosphere around the wet surface.
Public/Granted literature
- US20170323811A1 SUBSTRATE PROCESSING APPARATUS AND TEMPERATURE ADJUSTMENT METHOD Public/Granted day:2017-11-09
Information query
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